Biased resistor network model for electromigration failure and related phenomena in metallic lines
نویسندگان
چکیده
منابع مشابه
Monte Carlo simulation of electromigration phenomena in metallic lines
The electromigration (EM) of metallic lines is studied in terms of competition between two percolative processes taking place in a random resistor network. The effects associated with the transport of mass and with the consequent growth of the internal stress are accounted for by stochastic generation and recovery of voids, driven by the external current. Monte Carlo simulations enable us to in...
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Electromigration driven void dynamics plays an important role in the reliability of copper interconnects; a proper understanding of which is made more difficult due to local variations in line microstructure. In simulations, the parameter which best incorporates these variations is the effective atomic diffusivity D eff which is sensitive to grain size and orientation, interface layer thickness...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2004
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.70.174305